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MMBTA55-7

MMBTA55-7

MMBTA55-7

Diodes Incorporated

MMBTA55-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

MMBTA55-7 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series Automotive, AEC-Q101
JESD-609 Code e0
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn85Pb15)
Voltage - Rated DC -60V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating -100mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number MMBTA55
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power - Max 300mW
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 60V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage -250mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -4V
hFE Min 100
Continuous Collector Current -500mA
Height 1mm
Length 3.05mm
Width 1.4mm
REACH SVHC No SVHC
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.068615 $0.068615
500 $0.050453 $25.2265
1000 $0.042044 $42.044
2000 $0.038572 $77.144
5000 $0.036049 $180.245
10000 $0.033533 $335.33
15000 $0.032431 $486.465
50000 $0.031889 $1594.45
MMBTA55-7 Product Details

MMBTA55-7 Overview


This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.Maintaining the continuous collector voltage at -500mA is essential for high efficiency.If the emitter base voltage is kept at -4V, a high level of efficiency can be achieved.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 50MHz in the part.Breakdown input voltage is 60V volts.When collector current reaches its maximum, it can reach 500mA volts.

MMBTA55-7 Features


the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -100mA
a transition frequency of 50MHz

MMBTA55-7 Applications


There are a lot of Diodes Incorporated MMBTA55-7 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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