MMBTA55-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
MMBTA55-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
Series
Automotive, AEC-Q101
JESD-609 Code
e0
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn85Pb15)
Voltage - Rated DC
-60V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
235
Reach Compliance Code
not_compliant
Current Rating
-100mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
MMBTA55
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power - Max
300mW
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
250mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
-250mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
-60V
Emitter Base Voltage (VEBO)
-4V
hFE Min
100
Continuous Collector Current
-500mA
Height
1mm
Length
3.05mm
Width
1.4mm
REACH SVHC
No SVHC
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.068615
$0.068615
500
$0.050453
$25.2265
1000
$0.042044
$42.044
2000
$0.038572
$77.144
5000
$0.036049
$180.245
10000
$0.033533
$335.33
15000
$0.032431
$486.465
50000
$0.031889
$1594.45
MMBTA55-7 Product Details
MMBTA55-7 Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.Maintaining the continuous collector voltage at -500mA is essential for high efficiency.If the emitter base voltage is kept at -4V, a high level of efficiency can be achieved.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 50MHz in the part.Breakdown input voltage is 60V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA55-7 Features
the DC current gain for this device is 100 @ 100mA 1V a collector emitter saturation voltage of -250mV the vce saturation(Max) is 250mV @ 10mA, 100mA the emitter base voltage is kept at -4V the current rating of this device is -100mA a transition frequency of 50MHz
MMBTA55-7 Applications
There are a lot of Diodes Incorporated MMBTA55-7 applications of single BJT transistors.