BSP60E6327HTSA1 Overview
DC current gain in this device equals 2000 @ 500mA 10V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 1.8V allows maximum design flexibility.When VCE saturation is 1.8V @ 1mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V can result in a high level of efficiency.A transition frequency of 200MHz is present in the part.Maximum collector currents can be below 1A volts.
BSP60E6327HTSA1 Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
BSP60E6327HTSA1 Applications
There are a lot of Infineon Technologies BSP60E6327HTSA1 applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
