MMST4126-7-F Overview

This device has a DC current gain of 120 @ 2mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -400mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.Maintaining the continuous collector voltage at -200mA is essential for high efficiency.If the emitter base voltage is kept at -4V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -200mA for this device.In this part, there is a transition frequency of 250MHz.Breakdown input voltage is 25V volts.Maximum collector currents can be below 200mA volts.

MMST4126-7-F Features

the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -4V
the current rating of this device is -200mA
a transition frequency of 250MHz

MMST4126-7-F Applications

There are a lot of Diodes Incorporated MMST4126-7-F applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface