VN10LPSTOA

new-10%

Manufacturer part number:VN10LPSTOA

Manufacturer:Diodes Incorporated

Description:MOSFET VMOS N Channel

Case Package:SOT-23

Datasheet:VN10LPSTOA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount, Through Hole
Mounting Type	Through Hole
Package / Case	E-Line-3, Formed Leads
Weight	453.59237mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2012
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Form	WIRE
Peak Reflow Temperature (Cel)	260
Current Rating	270mA
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
JESD-30 Code	R-PSIP-W3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	625mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	625mW
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	60pF @ 25V
Current - Continuous Drain (Id) @ 25°C	270mA Ta
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	270mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.27A
Drain-source On Resistance-Max	7.5Ohm
Drain to Source Breakdown Voltage	60V
Height	4.01mm
Length	4.77mm
Width	2.41mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free