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VN10LPSTOB

VN10LPSTOB

VN10LPSTOB

Diodes Incorporated

MOSFET N-CH 60V 0.27A TO92-3

SOT-23

VN10LPSTOB Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating 270mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSIP-W3
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 625mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 625mW
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Current - Continuous Drain (Id) @ 25°C 270mA Ta
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 270mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.27A
Drain-source On Resistance-Max 7.5Ohm
Drain to Source Breakdown Voltage 60V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

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