NTP52N10G

new-10%

Manufacturer part number:NTP52N10G

Manufacturer:ON Semiconductor

Description:NTP52N10G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTP52N10G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 2 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
Current Rating	52A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	214W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	214W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	30m Ω @ 26A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3150pF @ 25V
Current - Continuous Drain (Id) @ 25°C	60A Ta
Gate Charge (Qg) (Max) @ Vgs	135nC @ 10V
Rise Time	95ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	100 ns
Turn-Off Delay Time	74 ns
Continuous Drain Current (ID)	60A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	156A
Avalanche Energy Rating (Eas)	800 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free