ZTX1049ASTOA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX1049ASTOA Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3, Formed Leads
Operating Temperature
-55°C~200°C TJ
Packaging
Tape & Reel (TR)
Published
2012
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Other Transistors
Voltage - Rated DC
25V
Max Power Dissipation
1W
Current Rating
4A
Base Part Number
ZTX1049A
Element Configuration
Single
Gain Bandwidth Product
180MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
220mV
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 1A 2V
Current - Collector Cutoff (Max)
10nA
Vce Saturation (Max) @ Ib, Ic
220mV @ 50mA, 4A
Collector Emitter Breakdown Voltage
25V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
4A
Height
4.01mm
Length
4.77mm
Width
2.41mm
RoHS Status
RoHS Compliant
Lead Free
Lead Free
ZTX1049ASTOA Product Details
ZTX1049ASTOA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 1A 2V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 220mV @ 50mA, 4A.Continuous collector voltages of 4A should be maintained to achieve high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 4A.A maximum collector current of 4A volts is possible.
ZTX1049ASTOA Features
the DC current gain for this device is 300 @ 1A 2V the vce saturation(Max) is 220mV @ 50mA, 4A the emitter base voltage is kept at 5V the current rating of this device is 4A
ZTX1049ASTOA Applications
There are a lot of Diodes Incorporated ZTX1049ASTOA applications of single BJT transistors.