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BSP51

BSP51

BSP51

ON Semiconductor

BSP51 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BSP51 Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Weight 188mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 60V
Max Power Dissipation 1W
Current Rating 800mA
Base Part Number BSP51
Number of Elements 1
Polarity NPN
Element Configuration Single
Power - Max 1W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 150mA 10V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1.3V @ 500μA, 500mA
Collector Emitter Breakdown Voltage 80V
Collector Base Voltage (VCBO) 90V
Emitter Base Voltage (VEBO) 5V
hFE Min 1000
RoHS Status RoHS Compliant
Lead Free Lead Free
BSP51 Product Details

BSP51 Overview


In this device, the DC current gain is 1000 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.3V @ 500μA, 500mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Its current rating is 800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Collector current can be as low as 500mA volts at its maximum.

BSP51 Features


the DC current gain for this device is 1000 @ 150mA 10V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA

BSP51 Applications


There are a lot of ON Semiconductor BSP51 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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