BSP51 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BSP51 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Weight
188mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
60V
Max Power Dissipation
1W
Current Rating
800mA
Base Part Number
BSP51
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power - Max
1W
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 150mA 10V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1.3V @ 500μA, 500mA
Collector Emitter Breakdown Voltage
80V
Collector Base Voltage (VCBO)
90V
Emitter Base Voltage (VEBO)
5V
hFE Min
1000
RoHS Status
RoHS Compliant
Lead Free
Lead Free
BSP51 Product Details
BSP51 Overview
In this device, the DC current gain is 1000 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.3V @ 500μA, 500mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Its current rating is 800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Collector current can be as low as 500mA volts at its maximum.
BSP51 Features
the DC current gain for this device is 1000 @ 150mA 10V the vce saturation(Max) is 1.3V @ 500μA, 500mA the emitter base voltage is kept at 5V the current rating of this device is 800mA
BSP51 Applications
There are a lot of ON Semiconductor BSP51 applications of single BJT transistors.