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ZTX1147A

ZTX1147A

ZTX1147A

Diodes Incorporated

ZTX1147A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZTX1147A Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Manufacturer Package Identifier E-Line
Operating Temperature -55°C~200°C TJ
Packaging Bulk
Published 2012
JESD-609 Code e3
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -12V
Max Power Dissipation 1W
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating -4A
Frequency 115MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZTX1147A
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Transistor Application AMPLIFIER
Gain Bandwidth Product 115MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 235mV @ 70mA, 4A
Collector Emitter Breakdown Voltage 12V
Transition Frequency 115MHz
Collector Emitter Saturation Voltage -175mV
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -4A
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
ZTX1147A Product Details

ZTX1147A Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 250 @ 500mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of -175mV.A VCE saturation (Max) of 235mV @ 70mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltages of -4A should be maintained to achieve high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.115MHz is present in the transition frequency.During maximum operation, collector current can be as low as 4A volts.

ZTX1147A Features


the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of -175mV
the vce saturation(Max) is 235mV @ 70mA, 4A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 115MHz

ZTX1147A Applications


There are a lot of Diodes Incorporated ZTX1147A applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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