ZTX1147A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX1147A Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3
Number of Pins
3
Weight
453.59237mg
Transistor Element Material
SILICON
Manufacturer Package Identifier
E-Line
Operating Temperature
-55°C~200°C TJ
Packaging
Bulk
Published
2012
JESD-609 Code
e3
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-12V
Max Power Dissipation
1W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
-4A
Frequency
115MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX1147A
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
115MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
235mV @ 70mA, 4A
Collector Emitter Breakdown Voltage
12V
Transition Frequency
115MHz
Collector Emitter Saturation Voltage
-175mV
Collector Base Voltage (VCBO)
15V
Emitter Base Voltage (VEBO)
-5V
Continuous Collector Current
-4A
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
ZTX1147A Product Details
ZTX1147A Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 250 @ 500mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of -175mV.A VCE saturation (Max) of 235mV @ 70mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltages of -4A should be maintained to achieve high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.115MHz is present in the transition frequency.During maximum operation, collector current can be as low as 4A volts.
ZTX1147A Features
the DC current gain for this device is 250 @ 500mA 2V a collector emitter saturation voltage of -175mV the vce saturation(Max) is 235mV @ 70mA, 4A the emitter base voltage is kept at -5V the current rating of this device is -4A a transition frequency of 115MHz
ZTX1147A Applications
There are a lot of Diodes Incorporated ZTX1147A applications of single BJT transistors.