BC636TFR Overview

This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at -1A to achieve high efficiency.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1A.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

BC636TFR Features

the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A

BC636TFR Applications

There are a lot of ON Semiconductor BC636TFR applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter