ZTX558STOB Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 50mA 10V.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 6mA, 50mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -200mA.Emitter base voltages of -5V can achieve high levels of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -200mA.When collector current reaches its maximum, it can reach 200mA volts.

ZTX558STOB Features

the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA

ZTX558STOB Applications

There are a lot of Diodes Incorporated ZTX558STOB applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver