2SA2169-E Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 1A 2V DC current gain.A collector emitter saturation voltage of -290mV ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 580mV @ 250mA, 5A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.The maximum collector current is 10A volts.

2SA2169-E Features

the DC current gain for this device is 200 @ 1A 2V
a collector emitter saturation voltage of -290mV
the vce saturation(Max) is 580mV @ 250mA, 5A
the emitter base voltage is kept at 6V

2SA2169-E Applications

There are a lot of ON Semiconductor 2SA2169-E applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver