ZTX688BSTZ Overview

This device has a DC current gain of 500 @ 100mA 2V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 350mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In order to achieve high efficiency, the continuous collector voltage should be kept at 3A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Its current rating is 3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.This product comes in a E-Line (TO-92 compatible) device package from the supplier.There is a 12V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

ZTX688BSTZ Features

the DC current gain for this device is 500 @ 100mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 20mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
the supplier device package of E-Line (TO-92 compatible)

ZTX688BSTZ Applications

There are a lot of Diodes Incorporated ZTX688BSTZ applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver