KST14MTF Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Keeping the emitter base voltage at 10V can result in a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 300mA for this device.As you can see, the part has a transition frequency of 125MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.When collector current reaches its maximum, it can reach 300mA volts.

KST14MTF Features

the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 125MHz

KST14MTF Applications

There are a lot of ON Semiconductor KST14MTF applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface