ZVN2106GTA

new-10%

Manufacturer part number:ZVN2106GTA

Manufacturer:Diodes Incorporated

Description:Trans MOSFET N-CH 60V 0.71A 4-Pin(3+Tab) SOT-223 T/R

Case Package:SOT-23

Datasheet:ZVN2106GTA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	3
Weight	7.994566mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	2Ohm
Terminal Finish	Matte Tin (Sn)
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	710mA
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PDSO-G4
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Case Connection	DRAIN
Turn On Delay Time	7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2 Ω @ 1A, 10V
Vgs(th) (Max) @ Id	2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	75pF @ 18V
Current - Continuous Drain (Id) @ 25°C	710mA Ta
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	710mA
Threshold Voltage	2.4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	8A
Dual Supply Voltage	60V
Nominal Vgs	2.4 V
Height	1.65mm
Length	6.7mm
Width	3.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free