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MSC025SMA120B

  • MSC025SMA120B
  • MSC025SMA120B

MSC025SMA120B

MSC025SMA120B

Microsemi Corporation

SiCFET (Silicon Carbide) N-Channel 31mOhm @ 40A, 20V +25V, -10V 3020pF @ 1000V 232nC @ 20V 1.2kV TO-247-3

SOT-23

MSC025SMA120B Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Operating Temperature -55°C~175°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 500W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3020pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 103A Tc
Gate Charge (Qg) (Max) @ Vgs 232nC @ 20V
Drain to Source Voltage (Vdss) 1.2kV
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -10V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $36.59000 $36.59
500 $36.2241 $18112.05
1000 $35.8582 $35858.2
1500 $35.4923 $53238.45
2000 $35.1264 $70252.8
2500 $34.7605 $86901.25
MSC025SMA120B Product Details

MSC025SMA120B Overview


A device's maximal input capacitance is 3020pF @ 1000V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 1.2kV drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (20V).

MSC025SMA120B Features


a 1.2kV drain to source voltage (Vdss)


MSC025SMA120B Applications


There are a lot of Microsemi Corporation
MSC025SMA120B applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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