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ZVNL120ASTOB

ZVNL120ASTOB

ZVNL120ASTOB

Diodes Incorporated

MOSFET N-CH 200V 0.18A TO92-3

SOT-23

ZVNL120ASTOB Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating 180mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSIP-W3
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 700mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 700mW
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10 Ω @ 250mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 85pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180mA Ta
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 3V 5V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 180mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Height 4.01mm
Length 4.77mm
Width 2.41mm
RoHS Status RoHS Compliant
Lead Free Lead Free

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