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IRF7811AVPBF

IRF7811AVPBF

IRF7811AVPBF

Rochester Electronics, LLC

N-CH APPLICATION-SPECIFIC MOSFET

SOT-23

IRF7811AVPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 14mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1.801pF @ 10V
Current - Continuous Drain (Id) @ 25°C 10.8A Ta
Gate Charge (Qg) (Max) @ Vgs 26nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant

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