ZVP2110GTC

new-10%

Manufacturer part number:ZVP2110GTC

Manufacturer:Diodes Incorporated

Description:MOSFET P-CH 100V 0.31A SOT223

Case Package:SOT-23

Datasheet:ZVP2110GTC Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Weight	7.994566mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Voltage - Rated DC	-100V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
Current Rating	-350mA
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PDSO-G4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Number of Channels	1
Power Dissipation-Max	2W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Case Connection	DRAIN
Turn On Delay Time	7 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8 Ω @ 375mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	310mA Ta
Rise Time	15ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	310mA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	8Ohm
Drain to Source Breakdown Voltage	-100V
Pulsed Drain Current-Max (IDM)	3A
RoHS Status	RoHS Compliant
Lead Free	Lead Free