ZX3CD3S1M832TA

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Manufacturer part number:ZX3CD3S1M832TA

Manufacturer:Diodes Incorporated

Description:Bipolar Transistors - BJT PNP 40V/1A Sch Comb

Case Package:SOT-23

Datasheet:ZX3CD3S1M832TA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-VDFN Exposed Pad
Number of Pins	832
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	10
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Max Power Dissipation	3W
Terminal Position	QUAD
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Current Rating	-3.5A
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	ZX3CD3S1M832
Pin Count	10
JESD-30 Code	R-PQFP-F10
Qualification Status	Not Qualified
Number of Elements	1
Polarity	PNP
Element Configuration	Single
Case Connection	COLLECTOR
Power - Max	3W
Transistor Application	SWITCHING
Gain Bandwidth Product	190MHz
Transistor Type	PNP + Diode (Isolated)
Collector Emitter Voltage (VCEO)	370mV
Max Collector Current	3A
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 1.5A 2V
Current - Collector Cutoff (Max)	25nA
Vce Saturation (Max) @ Ib, Ic	370mV @ 250mA, 2.5A
Collector Emitter Breakdown Voltage	40V
Transition Frequency	190MHz
Max Breakdown Voltage	40V
Collector Base Voltage (VCBO)	50V
Emitter Base Voltage (VEBO)	-7.5V
Height	1mm
Length	3mm
Width	2mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free