ZX5T955GTC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZX5T955GTC Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e3
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
3W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
120MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZX5T955
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
3W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
120MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
140V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A 5V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
360mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
140V
Transition Frequency
120MHz
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
7V
hFE Min
100
Height
1.7mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
ZX5T955GTC Product Details
ZX5T955GTC Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1A 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 7V for high efficiency.120MHz is present in the transition frequency.During maximum operation, collector current can be as low as 4A volts.
ZX5T955GTC Features
the DC current gain for this device is 100 @ 1A 5V the vce saturation(Max) is 360mV @ 300mA, 3A the emitter base voltage is kept at 7V a transition frequency of 120MHz
ZX5T955GTC Applications
There are a lot of Diodes Incorporated ZX5T955GTC applications of single BJT transistors.