ZXM61P02FTA

new-10%

ZXM61P02FTA

Manufacturer part number:ZXM61P02FTA

Manufacturer:Diodes Incorporated

Description:MOSFET 20V P-Chnl HDMOS

Case Package:SOT-23

Datasheet:ZXM61P02FTA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	7.994566mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	600mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW THRESHOLD
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-800mA
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	625mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	625mW
Turn On Delay Time	2.9 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	600m Ω @ 610mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	150pF @ 15V
Current - Continuous Drain (Id) @ 25°C	900mA Ta
Gate Charge (Qg) (Max) @ Vgs	3.5nC @ 4.5V
Rise Time	6.7ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.7V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	6.7 ns
Turn-Off Delay Time	11.2 ns
Continuous Drain Current (ID)	900mA
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	0.9A
Drain to Source Breakdown Voltage	-20V
Dual Supply Voltage	-20V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-700 mV
Height	1.1mm
Length	3.04mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free