ZXM62P03E6TC

new-10%

Manufacturer part number:ZXM62P03E6TC

Manufacturer:Diodes Incorporated

Description:MOSFET P-CH 30V 1.5A SOT23-6

Case Package:SOT-23

Datasheet:ZXM62P03E6TC Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6
Number of Pins	6
Weight	14.996898mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	625mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	625mW
Turn On Delay Time	2.8 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	230m Ω @ 800mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	330pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.5A Ta
Gate Charge (Qg) (Max) @ Vgs	10.2nC @ 10V
Rise Time	6.4ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6.4 ns
Turn-Off Delay Time	13.9 ns
Continuous Drain Current (ID)	1.5A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-30V
Height	1.3mm
Length	3.1mm
Width	1.8mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant