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IRF450

IRF450

IRF450

Infineon Technologies

IRF450 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF450 Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Number of Pins 2
Weight 10g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
Series HEXFET®
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory FET General Purpose Power
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form PIN/PEG
Current Rating 12A
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 150W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 500m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 190ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 130 ns
Turn-Off Delay Time 170 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.5Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 48A
Avalanche Energy Rating (Eas) 8 mJ
Nominal Vgs 4 V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
IRF450 Product Details
IRF450 Description

HEXFET? MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
IRF450 Features

● Repetitive Avalanche Ratings
● Dynamic dv/dt Rating
● Hermetically Sealed
● Simple Drive Requirements
● ESD Rating: Class 3A per MIL-STD-750, Method 1020
IRF450 Applications

● Switching power supplies
● Motor controls
● Inverters
● Choppers
● Audio amplifiers
● High energy pulse circuits

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