ZXM64N02XTC

new-10%

ZXM64N02XTC

Manufacturer part number:ZXM64N02XTC

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 20V 5.4A 8MSOP

Case Package:SOT-23

Datasheet:ZXM64N02XTC Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Weight	139.989945mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Power
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	5.4A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	S-PDSO-G8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	1.1W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.1W
Turn On Delay Time	5.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 3.8A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 15V
Current - Continuous Drain (Id) @ 25°C	5.4A Ta
Gate Charge (Qg) (Max) @ Vgs	16nC @ 4.5V
Rise Time	9.6ns
Drive Voltage (Max Rds On,Min Rds On)	2.7V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	9.6 ns
Turn-Off Delay Time	28.3 ns
Continuous Drain Current (ID)	5.4A
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.04Ohm
Drain to Source Breakdown Voltage	20V
Height	950μm
Length	3.1mm
Width	3.1mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free