DMN26D0UFB4-7

new-10%

Manufacturer part number:DMN26D0UFB4-7

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 20V 230MA DFN

Case Package:SOT-23

Datasheet:DMN26D0UFB4-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-XFDFN
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Digi-Reel®
Published	2017
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	10Ohm
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature	ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	350mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	350mW
Case Connection	DRAIN
Turn On Delay Time	3.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	14.1pF @ 15V
Current - Continuous Drain (Id) @ 25°C	230mA Ta
Rise Time	7.9ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±10V
Fall Time (Typ)	15.2 ns
Turn-Off Delay Time	13.4 ns
Continuous Drain Current (ID)	240mA
Gate to Source Voltage (Vgs)	10V
Drain Current-Max (Abs) (ID)	0.24A
DS Breakdown Voltage-Min	20V
Height	350μm
Length	1.05mm
Width	650μm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free