ZXMN10A25GTA

new-10%

Manufacturer part number:ZXMN10A25GTA

Manufacturer:Diodes Incorporated

Description:ZXMN10A25G Series N-Channel 100 V 0.125 Ohm Power MOSFET Surface Mount-SOT-223-3

Case Package:SOT-23

Datasheet:ZXMN10A25GTA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Weight	7.994566mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	125mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	FAST SWITCHING
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PDSO-G4
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.9W
Case Connection	DRAIN
Turn On Delay Time	4.9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	125m Ω @ 2.9A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	859pF @ 50V
Current - Continuous Drain (Id) @ 25°C	2.9A Ta
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Rise Time	3.7ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	9.4 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	4A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	2.9A
Drain to Source Breakdown Voltage	100V
Height	1.65mm
Length	6.7mm
Width	3.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free