TK6Q60W,S1VQ

new-10%

Manufacturer part number:TK6Q60W,S1VQ

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N CH 600V 6.2A IPAK

Case Package:SOT-23

Datasheet:TK6Q60W,S1VQ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Number of Pins	3
Operating Temperature	150°C TJ
Packaging	Tube
Published	2014
Series	DTMOSIV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	820mOhm
Capacitance	390pF
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	60W Tc
Element Configuration	Single
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	820m Ω @ 3.1A, 10V
Vgs(th) (Max) @ Id	3.7V @ 310μA
Input Capacitance (Ciss) (Max) @ Vds	390pF @ 300V
Current - Continuous Drain (Id) @ 25°C	6.2A Ta
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	18ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	6.2A
Gate to Source Voltage (Vgs)	30V
FET Feature	Super Junction
RoHS Status	RoHS Compliant