ZXMN2F34MATA

new-10%

Manufacturer part number:ZXMN2F34MATA

Manufacturer:Diodes Incorporated

Description:MOSFET 20V N-Channel Enhance. Mode MOSFET

Case Package:SOT-23

Datasheet:ZXMN2F34MATA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-VDFN
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	60mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.35W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.35W
Case Connection	DRAIN
Turn On Delay Time	2.65 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	60m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	277pF @ 10V
Current - Continuous Drain (Id) @ 25°C	4A Ta
Gate Charge (Qg) (Max) @ Vgs	2.8nC @ 4.5V
Rise Time	4.2ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	5.1 ns
Turn-Off Delay Time	9.9 ns
Continuous Drain Current (ID)	5.1A
Threshold Voltage	800mV
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	4A
Drain to Source Breakdown Voltage	20V
Dual Supply Voltage	20V
Nominal Vgs	800 mV
Height	950μm
Length	2.1mm
Width	2.1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free