FDD6760A

new-10%

Manufacturer part number:FDD6760A

Manufacturer:ON Semiconductor

Description:MOSFET NCH 25V 27A DPAK

Case Package:SOT-23

Datasheet:FDD6760A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	260.37mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	6MOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	3.7W Ta 65W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.7W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.2m Ω @ 27A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3170pF @ 13V
Current - Continuous Drain (Id) @ 25°C	27A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs	62nC @ 10V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	27A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	200A
Avalanche Energy Rating (Eas)	72 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free