ZXMN3A02X8TA

new-10%

Manufacturer part number:ZXMN3A02X8TA

Manufacturer:Diodes Incorporated

Description:MOSFET 30V N Chnl UMOS

Case Package:SOT-23

Datasheet:ZXMN3A02X8TA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins	8
Weight	139.989945mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	25mOhm
Terminal Finish	Matte Tin (Sn)
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	6.7A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	1.1W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.8W
Turn On Delay Time	3.9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5.3A Ta
Gate Charge (Qg) (Max) @ Vgs	26.8nC @ 10V
Rise Time	5.5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	5.5 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	6.7A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	5.3A
Drain to Source Breakdown Voltage	30V
Height	950μm
Length	3.1mm
Width	3.1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free