ZXMN3B04N8TC

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Manufacturer part number:ZXMN3B04N8TC

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 30V 7.2A 8SOIC

Case Package:SOT-23

Datasheet:ZXMN3B04N8TC Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	73.992255mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	7.6A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	2W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 7.2A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2480pF @ 15V
Current - Continuous Drain (Id) @ 25°C	7.2A Ta
Gate Charge (Qg) (Max) @ Vgs	23.1nC @ 4.5V
Rise Time	11.5ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	16.6 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	7.2A
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.025Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	45A
RoHS Status	RoHS Compliant
Lead Free	Lead Free