ZXMN3G32DN8TA

new-10%

Manufacturer part number:ZXMN3G32DN8TA

Manufacturer:Diodes Incorporated

Description:MOSFET 2N-CH 30V 5.5A 8SOIC

Case Package:SOT-23

Datasheet:ZXMN3G32DN8TA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	73.992255mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	45mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Max Power Dissipation	2.1W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.1W
Turn On Delay Time	2.5 ns
Power - Max	1.8W
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	28m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	472pF @ 15V
Current - Continuous Drain (Id) @ 25°C	5.5A
Gate Charge (Qg) (Max) @ Vgs	10.5nC @ 10V
Rise Time	3.1ns
Fall Time (Typ)	9.7 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	7.1A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	5.5A
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	3 V
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free