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FDG8850NZ

  • FDG8850NZ
  • FDG8850NZ

FDG8850NZ

FDG8850NZ

ON Semiconductor

FDG8850NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDG8850NZ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 28mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 400mOhm
Subcategory FET General Purpose Power
Max Power Dissipation 360mW
Terminal Form GULL WING
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 360mW
Turn On Delay Time 4 ns
Power - Max 300mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 750mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 1.44nC @ 4.5V
Rise Time 1ns
Fall Time (Typ) 1 ns
Turn-Off Delay Time 9 ns
Continuous Drain Current (ID) 750mA
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.75A
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Height 1.1mm
Length 2mm
Width 1.25mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.19608 $0.58824
6,000 $0.18343 $1.10058
15,000 $0.17078 $2.5617
30,000 $0.16192 $4.8576
FDG8850NZ Product Details

FDG8850NZ           Description

 

  The dual N-channel logic level enhanced mode field effect transistor is produced by proprietary high cell density DMOS technology. This very high-density process is specially tailored to minimize on-resistance. The device is designed for low-voltage applications as a substitute for bipolar digital transistors and small-signal MOSFET. Because there is no need for bias resistors, this dual-digital FET can replace several different digital transistors with different bias resistance values.

 

FDG8850NZ       Features

 

Max rDS(on) = 0.4|? at VGS = 4.5V, ID = 0.75A

Max rDS(on) = 0.5|? at VGS = 2.7V, ID = 0.67A

Very low level gate drive requirements allowing operationin 3V circuits(VGS(th) <1.5V)

Very small package outline SC70-6

RoHS Compliant


FDG8850NZ              Applications

This product is general usage and suitable for many different applications.

 




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