ZXMN6A07FTA datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXMN6A07FTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
400mOhm
Subcategory
FET General Purpose Powers
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1.2A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
625mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
806mW
Turn On Delay Time
1.8 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
250m Ω @ 1.8A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
166pF @ 40V
Current - Continuous Drain (Id) @ 25°C
1.2A Ta
Gate Charge (Qg) (Max) @ Vgs
3.2nC @ 10V
Rise Time
1.4ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
1.4 ns
Turn-Off Delay Time
4.9 ns
Continuous Drain Current (ID)
1.2A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Dual Supply Voltage
60V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
3 V
Height
1.1mm
Length
3.04mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.51000
$0.51
500
$0.5049
$252.45
1000
$0.4998
$499.8
1500
$0.4947
$742.05
2000
$0.4896
$979.2
2500
$0.4845
$1211.25
ZXMN6A07FTA Product Details
ZXMN6A07FTA Description
This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with a fast switching speed, making it ideal for high-efficiency power management applications.