HUF75852G3

new-10%

Manufacturer part number:HUF75852G3

Manufacturer:ON Semiconductor

Description:HUF75852G3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:HUF75852G3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2002
Series	UltraFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	16MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	150V
Technology	MOSFET (Metal Oxide)
Current Rating	74A
Number of Elements	1
Voltage	150V
Power Dissipation-Max	500W Tc
Element Configuration	Single
Current	75A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500W
Case Connection	DRAIN
Turn On Delay Time	22 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	16m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7690pF @ 25V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	480nC @ 20V
Rise Time	151ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	107 ns
Turn-Off Delay Time	82 ns
Continuous Drain Current (ID)	75A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	150V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free