ZXMN6A08E6TA datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXMN6A08E6TA Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
17 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Number of Pins
6
Weight
14.996898mg
Transistor Element Material
SILICON
Manufacturer Package Identifier
SOT26 (SC74R)
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
80mOhm
Terminal Finish
Matte Tin (Sn)
Additional Feature
LOW THRESHOLD
Subcategory
FET General Purpose Powers
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
2.5A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
6
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.1W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.1W
Turn On Delay Time
2.6 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
80m Ω @ 4.8A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
459pF @ 40V
Current - Continuous Drain (Id) @ 25°C
2.8A Ta
Gate Charge (Qg) (Max) @ Vgs
5.8nC @ 10V
Rise Time
2.1ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
2.1 ns
Turn-Off Delay Time
12.3 ns
Continuous Drain Current (ID)
3.5A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
2.8A
Drain to Source Breakdown Voltage
60V
Max Junction Temperature (Tj)
150°C
Height
1.4mm
Length
3.1mm
Width
1.8mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.91000
$0.91
500
$0.9009
$450.45
1000
$0.8918
$891.8
1500
$0.8827
$1324.05
2000
$0.8736
$1747.2
2500
$0.8645
$2161.25
ZXMN6A08E6TA Product Details
ZXMN6A08E6TA Overview
A device's maximum input capacitance is 459pF @ 40V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.A device can conduct a maximum continuous current of [2.8A] according to its drain current.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 12.3 ns.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 2.6 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
ZXMN6A08E6TA Features
a continuous drain current (ID) of 3.5A a drain-to-source breakdown voltage of 60V voltage the turn-off delay time is 12.3 ns
ZXMN6A08E6TA Applications
There are a lot of Diodes Incorporated ZXMN6A08E6TA applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
AC-DC Power Supply
Synchronous Rectification
DC/DC converters
Lighting
Motor drives and Uninterruptible Power Supplies
Motor control
PFC stages, hard switching PWM stages and resonant switching