ZXMN6A11GTC

new-10%

Manufacturer part number:ZXMN6A11GTC

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 60V 3.1A SOT223

Case Package:SOT-23

Datasheet:ZXMN6A11GTC Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Weight	7.994566mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	LOW THRESHOLD
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	2.7A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PDSO-G4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	2W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Case Connection	DRAIN
Turn On Delay Time	1.95 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	120m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	330pF @ 40V
Current - Continuous Drain (Id) @ 25°C	3.1A Ta
Gate Charge (Qg) (Max) @ Vgs	5.7nC @ 10V
Rise Time	3.5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4.6 ns
Turn-Off Delay Time	8.2 ns
Continuous Drain Current (ID)	3.1A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	3.8A
Drain to Source Breakdown Voltage	60V
RoHS Status	RoHS Compliant
Lead Free	Lead Free