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ZXMN7A11KTC

ZXMN7A11KTC

ZXMN7A11KTC

Diodes Incorporated

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 130m Ω @ 4.4A, 10V ±20V 298pF @ 40V 7.4nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

ZXMN7A11KTC Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 130mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Voltage - Rated DC 70V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 6.1A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.11W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 8.5W
Case Connection DRAIN
Turn On Delay Time 1.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 130m Ω @ 4.4A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 298pF @ 40V
Current - Continuous Drain (Id) @ 25°C 4.2A Ta
Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 10V
Rise Time 2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.8 ns
Turn-Off Delay Time 11.5 ns
Continuous Drain Current (ID) 6.1A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4.2A
Drain to Source Breakdown Voltage 70V
Height 2.39mm
Length 6.73mm
Width 6.22mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.787120 $2.78712
10 $2.629358 $26.29358
100 $2.480527 $248.0527
500 $2.340120 $1170.06
1000 $2.207660 $2207.66
ZXMN7A11KTC Product Details

ZXMN7A11KTC Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 298pF @ 40V.This device conducts a continuous drain current (ID) of 6.1A, which is the maximum continuous current transistor can conduct.Using VGS=70V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 70V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 4.2A.When the device is turned off, a turn-off delay time of 11.5 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 1.9 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

ZXMN7A11KTC Features


a continuous drain current (ID) of 6.1A
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 11.5 ns


ZXMN7A11KTC Applications


There are a lot of Diodes Incorporated
ZXMN7A11KTC applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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