NDP4060 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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NDP4060 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-65°C~175°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
50W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
100mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
450pF @ 25V
Current - Continuous Drain (Id) @ 25°C
15A Tc
Gate Charge (Qg) (Max) @ Vgs
17nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.48000
$0.48
500
$0.4752
$237.6
1000
$0.4704
$470.4
1500
$0.4656
$698.4
2000
$0.4608
$921.6
2500
$0.456
$1140
NDP4060 Product Details
NDP4060 Description
This high cell density, DMOS N-Channel enhancement mode power field effect transistor is made exclusively by Fairchild. In the avalanche and commutation modes, this very high density technology has been specifically designed to decrease on-state resistance, offer improved switching performance, and withstand high energy pulses. In low voltage applications like automotive, DC/DC converters, PWM motor controllers, and other battery-powered circuits where quick switching, little in-line power loss, and resistance to transients are required, these devices are especially well-suited.
NDP4060 Features
15A, 60V. RDS(ON) = 0.10W @ VGS=10V.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.