ZXMP3F35N8TA

new-10%

Manufacturer part number:ZXMP3F35N8TA

Manufacturer:Diodes Incorporated

Description:Trans MOSFET P-CH 30V 12.3A 8-Pin SO T/R

Case Package:SOT-23

Datasheet:ZXMP3F35N8TA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	12mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Number of Channels	2
Power Dissipation-Max	1.56W Ta
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.8W
Turn On Delay Time	5.4 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	2.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4600pF @ 15V
Current - Continuous Drain (Id) @ 25°C	9.3A Ta
Gate Charge (Qg) (Max) @ Vgs	77.1nC @ 10V
Rise Time	9.9ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	55.6 ns
Turn-Off Delay Time	103 ns
Continuous Drain Current (ID)	12.3A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	17.1A
Drain to Source Breakdown Voltage	-30V
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free