IRF1407STRRPBF

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IRF1407STRRPBF

Manufacturer part number:IRF1407STRRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 75V 100A D2PAK

Case Package:SOT-23

Datasheet:IRF1407STRRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.8W Ta 200W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	200W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.8m Ω @ 78A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	250nC @ 10V
Rise Time	150ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	140 ns
Turn-Off Delay Time	150 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	75A
Drain-source On Resistance-Max	0.0078Ohm
Drain to Source Breakdown Voltage	75V
Pulsed Drain Current-Max (IDM)	520A
Height	4.826mm
Length	10.668mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free