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ZXT10P40DE6TA

ZXT10P40DE6TA

ZXT10P40DE6TA

Diodes Incorporated

ZXT10P40DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXT10P40DE6TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Weight 14.996898mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation 1.1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -2A
Frequency 190MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXT10P40D
Pin Count 6
Number of Elements 1
Element Configuration Single
Power Dissipation 1.7W
Power - Max 1.1W
Transistor Application SWITCHING
Gain Bandwidth Product 190MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 1A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 190MHz
Collector Emitter Saturation Voltage -210mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -2A
Height 1.3mm
Length 3.1mm
Width 1.8mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.516166 $0.516166
10 $0.486948 $4.86948
100 $0.459386 $45.9386
500 $0.433383 $216.6915
1000 $0.408852 $408.852
ZXT10P40DE6TA Product Details

ZXT10P40DE6TA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 1A 2V.The collector emitter saturation voltage is -210mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -2A is necessary for high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-2A).A transition frequency of 190MHz is present in the part.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 2A volts can be achieved.

ZXT10P40DE6TA Features


the DC current gain for this device is 180 @ 1A 2V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 190MHz

ZXT10P40DE6TA Applications


There are a lot of Diodes Incorporated ZXT10P40DE6TA applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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