2SA1036KT146Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SA1036KT146Q Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
-32V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-500mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SA1036
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power - Max
200mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
600mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 30mA, 300mA
Collector Emitter Breakdown Voltage
32V
Transition Frequency
200MHz
Max Breakdown Voltage
32V
Collector Base Voltage (VCBO)
-40V
Emitter Base Voltage (VEBO)
-5V
hFE Min
82
Continuous Collector Current
-500mA
VCEsat-Max
0.4 V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.068400
$0.0684
500
$0.050294
$25.147
1000
$0.041912
$41.912
2000
$0.038451
$76.902
5000
$0.035936
$179.68
10000
$0.033429
$334.29
15000
$0.032329
$484.935
50000
$0.031789
$1589.45
2SA1036KT146Q Product Details
2SA1036KT146Q Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 100mA 3V DC current gain.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 30mA, 300mA.A -500mA continuous collector voltage is necessary to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As a result, the part has a transition frequency of 200MHz.Input voltage breakdown is available at 32V volts.During maximum operation, collector current can be as low as 500mA volts.
2SA1036KT146Q Features
the DC current gain for this device is 120 @ 100mA 3V the vce saturation(Max) is 600mV @ 30mA, 300mA the emitter base voltage is kept at -5V the current rating of this device is -500mA a transition frequency of 200MHz
2SA1036KT146Q Applications
There are a lot of ROHM Semiconductor 2SA1036KT146Q applications of single BJT transistors.