ZXTN25100DGTA Overview

This device has a DC current gain of 300 @ 10mA 2V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 600mA, 3A.An emitter's base voltage can be kept at 7V to gain high efficiency.In this part, there is a transition frequency of 175MHz.A breakdown input voltage of 100V volts can be used.The maximum collector current is 3A volts.

ZXTN25100DGTA Features

the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 500mV @ 600mA, 3A
the emitter base voltage is kept at 7V
a transition frequency of 175MHz

ZXTN25100DGTA Applications

There are a lot of Diodes Incorporated ZXTN25100DGTA applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver