SBC847BLT1G Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 100mA to achieve high efficiency.Keeping the emitter base voltage at 6V can result in a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.This device can take an input voltage of 45V volts before it breaks down.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
SBC847BLT1G Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
SBC847BLT1G Applications
There are a lot of ON Semiconductor SBC847BLT1G applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
