ZXTN4004ZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTN4004ZTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
89
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
1.5W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTN4004
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.5W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
150V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 250mV
Collector Emitter Breakdown Voltage
150V
Max Breakdown Voltage
150V
Collector Base Voltage (VCBO)
150V
Emitter Base Voltage (VEBO)
7V
hFE Min
100
Continuous Collector Current
1A
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.210736
$0.210736
10
$0.198808
$1.98808
100
$0.187554
$18.7554
500
$0.176938
$88.469
1000
$0.166923
$166.923
ZXTN4004ZTA Product Details
ZXTN4004ZTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 250mV.A 1A continuous collector voltage is necessary to achieve high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.Input voltage breakdown is available at 150V volts.In extreme cases, the collector current can be as low as 1A volts.
ZXTN4004ZTA Features
the DC current gain for this device is 100 @ 150mA 250mV the emitter base voltage is kept at 7V
ZXTN4004ZTA Applications
There are a lot of Diodes Incorporated ZXTN4004ZTA applications of single BJT transistors.