JANTXV2N7371 Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 6A 3V.As it features a collector emitter saturation voltage of 3V, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 120mA, 12A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Maximum collector currents can be below 12A volts.

JANTXV2N7371 Features

the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V

JANTXV2N7371 Applications

There are a lot of Microsemi Corporation JANTXV2N7371 applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface