EPC2016C

new-10%

Manufacturer part number:EPC2016C

Manufacturer:EPC

Description:GANFET TRANS 100V 18A BUMPED DIE

Case Package:SOT-23

Datasheet:EPC2016C Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	eGaN®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Technology	GaNFET (Gallium Nitride)
Number of Channels	1
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	16mOhm @ 11A, 5V
Vgs(th) (Max) @ Id	2.5V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds	420pF @ 50V
Current - Continuous Drain (Id) @ 25°C	18A Ta
Gate Charge (Qg) (Max) @ Vgs	4.5nC @ 5V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	+6V, -4V
Continuous Drain Current (ID)	18A
Gate to Source Voltage (Vgs)	6V
Drain to Source Breakdown Voltage	100V
Input Capacitance	420pF
Max Junction Temperature (Tj)	150°C
Drain to Source Resistance	12mOhm
Rds On Max	16 mΩ
Height	815μm
RoHS Status	ROHS3 Compliant