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FDP16AN08A0

FDP16AN08A0

FDP16AN08A0

ON Semiconductor

FDP16AN08A0 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDP16AN08A0 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 75V
Technology MOSFET (Metal Oxide)
Current Rating 58A
Number of Elements 1
Power Dissipation-Max 135W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 135W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 58A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1857pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Ta 58A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Rise Time 82ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 9A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9A
Drain to Source Breakdown Voltage 75V
Height 9.4mm
Length 10.67mm
Width 4.83mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
800 $1.40428 $1123.424
FDP16AN08A0 Product Details

FDP16AN08A0 Overview


A device's maximal input capacitance is 1857pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 9A amps.This device has 75V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 75V.The drain current is the?maximum continuous current the device can conduct, and the drain current of this device is 9A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 28 ns.A turn-on delay time of 8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.By using drive voltage (6V 10V), this device helps reduce its overall power consumption.

FDP16AN08A0 Features


a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 28 ns

FDP16AN08A0 Applications


There are a lot of ON Semiconductor FDP16AN08A0 applications of single MOSFETs transistors.

  • General Purpose Interfacing Switch
  • Uninterruptible Power Supply
  • Motor drives and Uninterruptible Power Supplies
  • Battery Protection Circuit
  • DC-to-DC converters
  • Load switching
  • Synchronous Rectification
  • Server power supplies
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Power Management Functions

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