FDP16AN08A0 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDP16AN08A0 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
9 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2013
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Voltage - Rated DC
75V
Technology
MOSFET (Metal Oxide)
Current Rating
58A
Number of Elements
1
Power Dissipation-Max
135W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
135W
Case Connection
DRAIN
Turn On Delay Time
8 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
16m Ω @ 58A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1857pF @ 25V
Current - Continuous Drain (Id) @ 25°C
9A Ta 58A Tc
Gate Charge (Qg) (Max) @ Vgs
42nC @ 10V
Rise Time
82ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
30 ns
Turn-Off Delay Time
28 ns
Continuous Drain Current (ID)
9A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
9A
Drain to Source Breakdown Voltage
75V
Height
9.4mm
Length
10.67mm
Width
4.83mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
800
$1.40428
$1123.424
FDP16AN08A0 Product Details
FDP16AN08A0 Overview
A device's maximal input capacitance is 1857pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 9A amps.This device has 75V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 75V.The drain current is the?maximum continuous current the device can conduct, and the drain current of this device is 9A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 28 ns.A turn-on delay time of 8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.By using drive voltage (6V 10V), this device helps reduce its overall power consumption.
FDP16AN08A0 Features
a continuous drain current (ID) of 9A a drain-to-source breakdown voltage of 75V voltage the turn-off delay time is 28 ns
FDP16AN08A0 Applications
There are a lot of ON Semiconductor FDP16AN08A0 applications of single MOSFETs transistors.
General Purpose Interfacing Switch
Uninterruptible Power Supply
Motor drives and Uninterruptible Power Supplies
Battery Protection Circuit
DC-to-DC converters
Load switching
Synchronous Rectification
Server power supplies
Synchronous Rectification for ATX 1 Server I Telecom PSU